Isekethe yomqhubi we-semiconductor yamandla icandelo elibalulekileyo leesekethe ezidibeneyo, ezinamandla, ezisetyenziselwa ii-ICs zomqhubi we-IGBT ukongeza ekuboneleleni kwinqanaba le-drive kunye nelangoku, ngokufuthi kunye nemisebenzi yokukhusela i-drive, kubandakanywa ukukhuselwa kwesiphaluka esifutshane se-desaturation, ukuvalwa kwe-undervoltage, i-Miller clamp, ukuvala izigaba ezimbini. , ukuvala okuthambileyo, i-SRC (ukulawula izinga lokubulala), njl. Iimveliso nazo zinemigangatho eyahlukeneyo yokusebenza kwe-insulation.Nangona kunjalo, njengesekethe edibeneyo, iphakheji yayo inquma ukusetyenziswa kwamandla aphezulu, umqhubi we-IC output current unokuba ngaphezu kwe-10A kwezinye iimeko, kodwa akakwazi ukuhlangabezana neemfuno zokuqhuba iimodyuli eziphezulu zangoku ze-IGBT, eli phepha liza kuxoxa nge-IGBT yokuqhuba. ulwandiso lwangoku nolwangoku.
Indlela yokwandisa umqhubi wangoku
Xa i-drive yangoku ifuna ukwandiswa, okanye xa uqhuba ii-IGBT nge-high current kunye ne-capacitance enkulu yesango, kuyimfuneko ukwandisa okwangoku kumqhubi we-IC.
Ukusebenzisa i-bipolar transistors
Olona yilo luqhelekileyo lomqhubi wesango le-IGBT kukuqonda ukwandiswa kwangoku ngokusebenzisa umlandeli we-emitter ohambelanayo.Imveliso yangoku ye-emitter yomlandeli we-transistor inqunywe yi-DC ingeniso ye-transistor hFE okanye i-β kunye nesiseko se-IB yangoku, xa ikhoyo ngoku efunekayo ukuqhuba i-IGBT inkulu kune-IB * β, ngoko i-transistor iya kungena kwindawo yokusebenza yomgca kunye nemveliso. i-drive yangoku ayanelanga, ngoko ukutshaja kunye nokukhupha isantya se-IGBT capacitor kuya kucotha kwaye ilahleko ye-IGBT yanda.
Ukusebenzisa ii-MOSFETs
Ii-MOSFETs zinokusetyenziselwa ukwandiswa kwangoku komqhubi, isekethe ngokubanzi yenziwe yi-PMOS + NMOS, kodwa inqanaba lengqiqo yesakhiwo sesekethe lichasene ne-transistor push-pull.Uyilo lomthombo wetyhubhu ephezulu ye-PMOS iqhagamshelwe kunikezelo lwamandla olulungileyo, isango lisezantsi kunomthombo wombane onikiweyo we-PMOS, kwaye umqhubi we-IC ophumayo ukwinqanaba eliphezulu lokuvula, ngoko ke ukusetyenziswa kwesakhiwo se-PMOS + NMOS. inokufuna inverter kuyilo.
Ngebipolar transistors okanye MOSFETs?
(1) Umahluko osebenzayo, ngokuqhelekileyo kwizicelo eziphezulu zamandla, i-frequency switching frequency ayiphezulu kakhulu, ngoko ke ilahleko yokuqhuba iyona nto iphambili, xa i-transistor inenzuzo.Uyilo oluninzi lwangoku loxinzelelo lwamandla aphezulu, olufana nemoto yombane yokuqhuba, apho ukutshatyalaliswa kobushushu kunzima kwaye amaqondo obushushu aphezulu ngaphakathi kwimeko evaliweyo, xa ukusebenza kakuhle kubaluleke kakhulu kwaye iisekethe ze-transistor zingakhethwa.
(2) Isiphumo sesisombululo se-bipolar transistor sinokuhla kwamandla ombane okubangelwa yi-VCE(sat), amandla ombane obonelelo kufuneka anyuswe ukuhlawulela ityhubhu yokuqhuba i-VCE(sat) ukuphumeza umbane wokuqhuba we-15V, ngelixa isisombululo se-MOSFET. ingaphantse ifezekise imveliso kaloliwe ukuya kuloliwe.
(3) I-MOSFET imelana nombane, iVGS malunga ne-20V kuphela, enokuba yingxaki efuna ukuhoywa xa kusetyenziswa izixhobo zombane ezilungileyo nezingalunganga.
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(5) Ukuba uqhuba i-Si / SiC MOSFETs, isantya sokutshintsha se-bipolar transistors ngokuqhelekileyo sihamba kancinci kunento yokuqhuba i-MOSFETs, ekufuneka ithathelwe ingqalelo ukusebenzisa i-MOSFETs ukwandisa okwangoku.
(6) Ukuqina kwenqanaba lokufaka kwi-ESD kunye ne-voltage ye-surge, i-bipolar transistor PN junction inenzuzo ebalulekileyo xa kuthelekiswa ne-MOS yesango le-oxide.
I-bipolar transistors kunye neempawu ze-MOSFET azifani, yintoni onokuyisebenzisa okanye kufuneka uzenzele isigqibo ngokuhambelana neemfuno zoyilo lwenkqubo.
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Ixesha lokuposa: May-17-2022