Yintoni i-Narrow Pulse Phenomenon
Njengohlobo lokutshintsha kwamandla, i-IGBT idinga ixesha elithile lokuphendula ukusuka kwinqanaba lesango ukuya kwinkqubo yokutshintsha isixhobo, njengokuba kulula ukucinezela isandla ngokukhawuleza kakhulu ebomini ukutshintsha isango, ukubetha okufutshane kakhulu kunokubangela ukuphakama kakhulu. i-voltage spikes okanye iingxaki eziphezulu ze-oscillation.Esi siganeko senzeka ngokungenakuzinceda ngamaxesha athile njengoko i-IGBT iqhutywa yimiqondiso emodareyithiweyo ye-PWM ephezulu.Umjikelo omncinci womsebenzi, kulula ukukhupha i-pulses emxinwa, kunye neempawu zokubuyisela umva ze-IGBT anti-parallel renewal diode FWD ziba ngokukhawuleza ngexesha lokutshintsha nzima.Ukuya kwi-1700V/1000A IGBT4 E4, inkcazo kwiqondo lokushisa elidibeneyo Tvj.op = 150 ℃, ixesha lokutshintsha tdon = 0.6us, tr = 0.12us kunye ne-tdoff = 1.3us, tf = 0.59us, ingabi ngaphantsi kwe-pulse ububanzi. kunesimbuku sexesha elichaziweyo lokutshintsha.Ngokuziqhelanisa, ngenxa yeempawu ezahlukeneyo zomthwalo njenge-photovoltaic kunye nokugcinwa kwamandla ngokugqithiseleyo xa amandla e- +/ - 1, i-pulse emxinwa iya kubonakala kufutshane nendawo ye-zero yangoku, njengejeneretha yamandla esebenzayo i-SVG, isihluzi esisebenzayo se-APF yamandla e-0, i-pulse emxinwa iya kubonakala kufuphi nowona mthwalo uphezulu wangoku, usetyenziso lwenyani lwangoku kufutshane nenqaku elingu-zero kunokwenzeka ukuba livele kwi-output waveform high-frequency oscillation, iingxaki ze-EMI zilandela.
Umxinwa we-pulse phenomenon unobangela
Ukusuka kwiziseko ze-semiconductor, esona sizathu siphambili se-pulse phenomenon ye-pulse ngenxa ye-IGBT okanye i-FWD isanda kuqalisa ukuvula, ingagcwaliswa ngokukhawuleza ngabathwali, xa umthwali esasazeka xa evala i-IGBT okanye i-diode chip, xa kuthelekiswa nomthwali ngokupheleleyo. izaliswe emva kokuvalwa, i-di / dt inokwanda.I-overvoltage ephezulu ehambelanayo ye-IGBT iya kuveliswa phantsi kwe-commutation stray inductance, enokuthi ibangele utshintsho ngokukhawuleza kwi-diode reverse recovery current kwaye ngaloo ndlela i-snap-off phenomenon.Nangona kunjalo, le nto inxulumene ngokusondeleyo ne-IGBT kunye ne-FWD iteknoloji ye-chip, i-voltage yesixhobo kunye nangoku.
Okokuqala, kufuneka siqale kwi-classic double pulse schematic, lo mzobo ulandelayo ubonisa ingqiqo yokutshintsha kwe-IGBT isango lombane lokuqhuba, okwangoku kunye nombane.Ukusuka kwi-logic yokuqhuba ye-IGBT, inokwahlulwa ibe yi-pulse emxinwa ye-toff yexesha, eneneni ihambelana nexesha elifanelekileyo lokuqhuba i-diode FWD, enempembelelo enkulu kwincopho yokubuyisela umva kunye nesantya sokubuyisela, njengenqaku A. kumzobo, amandla aphezulu aphezulu okubuyisela umva akakwazi ukudlula umda we-FWD SOA;kunye nexesha elimxinwa le-pulse turn-on time ton, oku kunempembelelo enkulu ngokwentelekiso kwinkqubo yokucima i-IGBT, njengenqaku B kumzobo, ubukhulu becala i-IGBT yokuvala i-voltage spikes kunye ne-oscillations yangoku yokulandela.
Kodwa ukucinywa kwesixhobo sepulse emxinwa kakhulu kuya kubangela ukuba zeziphi iingxaki?Xa usenza umsebenzi, ngowuphi owona mda we-pulse ububanzi obusezantsi obufanelekileyo?Ezi ngxaki kunzima ukufumana iifomula zendalo yonke ukubala ngokuthe ngqo ngeethiyori kunye neefomula, uhlalutyo lwethiyori kunye nophando lukwancinci.Ukusuka kuvavanyo lwe-waveform yokwenyani kunye neziphumo zokubona igrafu ukuthetha, uhlalutyo kunye nesishwankathelo seempawu kunye nezinto eziqhelekileyo zesicelo, kulungele ngakumbi ukukunceda ukuba uqonde le nto, kwaye ulungise uyilo lokuphepha iingxaki.
I-IGBT imxinwa yi-pulse turn-on
I-IGBT njengenguqu esebenzayo, ukusebenzisa iimeko zangempela ukubona igrafu ukuthetha ngale nto iqinisekisa ngakumbi, ukuba nezinto eziphathekayo ezomileyo.
Ukusebenzisa imodyuli yamandla aphezulu IGBT4 PrimePACK™ FF1000R17IE4 njengento yokuvavanya, iimpawu zokucima isixhobo xa itoni iguquka phantsi kweemeko zeVce=800V, Ic=500A, Rg=1.7Ω Vge=+/-15V, Ta= I-25 ℃, ebomvu ngumqokeleli we-Ic, iblue yi-voltage kuzo zombini iziphelo ze-IGBT Vce, eluhlaza yi-voltage drive Vge.Vge.i-pulse ton iyancipha ukusuka kwi-2us ukuya kwi-1.3us ukubona utshintsho lwale voltage spike Vcep, lo mzobo ulandelayo ubonisa i-wave wave yovavanyo ngokuqhubekayo ukuze ubone inkqubo yokutshintsha, ngokukodwa eboniswe kwisangqa.
Xa i-ton itshintsha i-Ic yangoku, kwidimension ye-Vce ukubona utshintsho kwiimpawu ezibangelwa yi-ton.Iigrafu ezisekhohlo nasekunene zibonisa i-voltage spikes Vce_peak kwimisinga eyahlukeneyo Ic phantsi kweVce = 800V kunye neemeko ze-1000V ngokulandelelanayo.ukusuka kwiziphumo zovavanyo ezichaphazelekayo, itoni inefuthe elincinci kwi-voltage spikes Vce_peak kwimisinga emincinci;xa i-turn-off yangoku inyuka, ukucinywa kwe-pulse emxinwa kukulungele ukutshintsha ngokukhawuleza kwangoku kwaye emva koko kubangele i-spikes ephezulu yombane.Ukuthatha igrafu ekhohlo nasekunene njengezilungelelaniso zokuthelekisa, itoni inempembelelo enkulu kwinkqubo yokuvala xa i-Vce kunye ne-Ic yangoku iphezulu, kwaye inokuba notshintsho lwangoku ngequbuliso.Ukusuka kuvavanyo ukubona lo mzekelo FF1000R17IE4, ithoni yepulse encinci elona xesha lifanelekileyo elingekho ngaphantsi kwe-3us.
Ngaba kukho umahluko phakathi kokusebenza kweemodyuli zangoku eziphezulu kunye neemodyuli zangoku eziphantsi kulo mbandela?Thatha i-FF450R12ME3 imodyuli yamandla aphakathi njengomzekelo, lo mzobo ulandelayo ubonisa i-voltage overshoot xa itoni itshintsha kwimisinga yovavanyo eyahlukeneyo Ic.
Iziphumo ezifanayo, umphumo wetoni ekucinyweni kwe-voltage overshoot ayinanto kwiimeko zangoku eziphantsi ngaphantsi kwe-1/10 * Ic.Xa i-current inyuswa ukuya kwi-rerated current ye-450A okanye i-2 * Ic yangoku ye-900A, i-voltage overshoot kunye nobubanzi betoni ibonakala kakhulu.Ukuze kuvavanywe ukusebenza kweempawu zeemeko zokusebenza phantsi kweemeko ezigqithisileyo, amaxesha ama-3 ombane olinganiselweyo we-1350A, i-voltage spikes idlule i-voltage yokuthintela, ifakwe kwi-chip kwinqanaba elithile lombane, elizimeleyo kububanzi betoni. .
Lo mzobo ulandelayo ubonisa uthelekiso lwamaza ovavanyo lwe-ton=1us kunye ne-20us e-Vce=700V kunye ne-Ic=900A.Ukusuka kuvavanyo lwangempela, imodyuli yepulse wide at ton=1us iqalile ukujikeleza, kwaye i-voltage spike Vcep yi-80V ephezulu kune-ton=20us.Ngoko ke, kucetyiswa ukuba ixesha elincinci le-pulse akufanele libe ngaphantsi kwe-1us.
FWD emxinwa ipulse turn-on
Kwisekethe ye-half-bridge, i-IGBT yokucima i-pulse toff ihambelana ne-FWD yokuvula itoni yexesha.Umzobo ongezantsi ubonisa ukuba xa ixesha lokuvula i-FWD lingaphantsi kwe-2us, i-FWD i-reverse incopho yangoku iya kunyuka kwinqanaba elilinganisiweyo le-450A.Xa i-toff inkulu kune-2us, incopho ye-FWD yokubuyisela umva ngoku ayitshintshanga.
IGBT5 PrimePACK™3 + FF1800R17IP5 ukujonga iimpawu ze-diode zamandla aphezulu, ngakumbi phantsi kweemeko eziphantsi-zangoku kunye noshintsho lwetoni, umqolo olandelayo ubonisa i-VR = 900V, iimeko ze-1200V, kwiimeko ezincinci zangoku IF = 20A iimeko zokuthelekisa ngokuthe ngqo. kwezi zibini zamaza, kuyacaca ukuba xa i-ton = 3us, i-oscilloscope ayikwazanga ukubamba I-amplitude yale ngqungquthela ephezulu ye-oscillation.Oku kukwangqina ukuba i-oscillation ye-high-frequency oscillation yomthwalo wangoku ngaphaya kwe-zero point kwi-high-power device applications and FWD short-time short-reverse oscillation process zihlobene ngokusondeleyo.
Emva kokujonga i-intuitive waveform, sebenzisa idatha yokwenyani ukuqhubela phambili ukulinganisa kunye nokuthelekisa le nkqubo.I-dv/dt kunye ne-di/dt ye-diode iyahluka kunye ne-toff, kwaye incinci ixesha lokuqhuba i-FWD, ngokukhawuleza iimpawu zayo eziguqukayo ziya kuba.Xa iphezulu i-VR kuzo zombini iziphelo ze-FWD, njengoko i-diode conduction pulse iba yincinci, i-diode yayo yokubuyisela isantya sokubuyisela iya kukhawuleziswa, ijonge ngokukodwa idatha kwi-ton = iimeko ze-3us.
VR = 1200V xa.
dv/dt=44.3kV/us;di/dt=14kA/us.
Kwi-VR=900V.
dv/dt=32.1kV/us;di/dt=12.9kA/us.
Ngokujonga i-toni = i-3us, i-waveform high-frequency oscillation inamandla ngakumbi, kwaye ngaphaya kwendawo yokusebenza ekhuselekileyo ye-diode, i-on-time akufanele ibe ngaphantsi kwe-3us ukusuka kwindawo yokujonga i-diode FWD.
Kwinkcazo ye-high-voltage ye-3.3kV IGBT ngasentla, i-FWD yexesha lokuqhuba i-toni ichazwe ngokucacileyo kwaye ifunekayo, ithatha i-2400A / 3.3kV HE3 njengomzekelo, ixesha eliphantsi le-diode conduction ye-10us linikwe ngokucacileyo njengomda, okubangelwa ubukhulu becala ngenxa yokuba inkqubo yesekethe elahlekileyo inductance kwizicelo eziphezulu zamandla zikhulu, ixesha lokutshintsha lide, kwaye lidlulayo kwinkqubo yokuvula isixhobo Kulula ukugqitha ubuninzi obuvumelekileyo bokusetyenziswa kwamandla e-diode PRQM.
Ukusuka kolona vavanyo lwamaza kunye neziphumo zemodyuli, jonga iigrafu kwaye uthethe ngezishwankathelo ezisisiseko.
1. impembelelo ye-pulse wide ton kwi-IGBT cima i-current encinci (malunga ne-1/10 * Ic) incinci kwaye ngokwenene inokungahoywa.
2. I-IGBT inokuxhomekeka okuthile kwitoni yobubanzi be-pulse xa ucima i-high current, i-toni encinci iphezulu i-voltage spike V, kunye ne-trailing yangoku yokucima kuya kutshintsha ngokukhawuleza kwaye i-oscillation ephezulu iya kwenzeka.
3. Iimpawu ze-FWD zikhawulezisa inkqubo yokubuyisela umva njengoko ixesha liba lifutshane, kwaye i-FWD emfutshane ngexesha iya kubangela i-dv / dt enkulu kunye ne-di / dt, ngakumbi phantsi kweemeko ezisezantsi.Ukongeza, ii-IGBT ezine-voltage ephezulu zinikwa ubuncinci obucacileyo bexesha lokuvula i-diode tonmin=10us.
Ezona fomu zovavanyo kwiphepha zinike ireferensi ixesha elincinane lokudlala indima.
I-Zhejiang NeoDen Technology Co., Ltd. ibisenza kwaye ithumela ngaphandle koomatshini abancinci abancinci bokukhetha kunye nendawo ukusukela ngo-2010. Ukuthatha ithuba le-R&D yethu enamava, imveliso eqeqeshwe kakuhle, iNeoDen iphumelela igama elihle kubathengi behlabathi ngokubanzi.
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