Ukukhethwa kwesixhobo se-MOSFET ukuqwalasela yonke imiba yezinto, ukusuka kumncinci ukukhetha uhlobo lwe-N okanye uhlobo lwe-P, uhlobo lwephakheji, enkulu ukuya kwi-voltage ye-MOSFET, ukuxhathisa, njl., iimfuno ezahlukeneyo zesicelo ziyahluka.Eli nqaku lilandelayo lishwankathela ukhetho lwesixhobo se-MOSFET semithetho emi-3 emikhulu, ndiyakholwa ukuba emva kokufunda uya kuba neninzi.
1. Amandla okhetho lweMOSFET inyathelo lokuqala: P-tube, okanye N-tube?
Kukho iintlobo ezimbini ze-MOSFETs zamandla: i-N-channel kunye ne-P-channel, kwinkqubo yoyilo lwenkqubo ukukhetha i-N-tube okanye i-P-tube, kwisicelo esikhethekileyo sokukhetha, i-N-channel MOSFETs ukukhetha imodeli, ixabiso eliphantsi;P-channel MOSFETs ukukhetha imodeli ngaphantsi, ixabiso eliphezulu.
Ukuba i-voltage kuqhagamshelo lwe-S-pole ye-MOSFET yamandla ayingomhlaba wesalathiso wenkqubo, i-N-channel ifuna i-drive yonikezelo lwamandla omhlaba odadayo, i-transformer drive okanye i-bootstrap drive, i-complex yesekethe yokuqhuba;I-P-channel inokuqhutywa ngokuthe ngqo, ukuqhuba ilula.
Kufuneka kuthathelwe ingqalelo i-N-channel kunye ne-P-channel izicelo ikakhulu
a.Iikhompyuter zeNotebook, iidesktops kunye neeseva ezisetyenziselwa ukunika i-CPU kunye nenkqubo yokupholisa fan, inkqubo yokondla umshicileli wemoto drive, isicoci se-vacuum, izicoci zomoya, iifeni zombane kunye nezinye izixhobo zasekhaya zolawulo lwesekethe, ezi nkqubo zisebenzisa i-full-bridge yesakhiwo sesekethe, ingalo yebhulorho nganye. kwityhubhu inokusebenzisa i-P-tube, inokusebenzisa i-N-tube.
b.Inkqubo yonxibelelwano ye-48V inkqubo yokufaka i-hot-plug MOSFETs ebekwe kwindawo ephezulu, ungasebenzisa i-P-tubes, ungasebenzisa i-N-tubes.
c.I-Notebook yesekethe yokufaka ikhompyutha kuthotho, idlala indima yoqhagamshelo oluchasene nokubuyisela umva kunye nokutshintsha amandla amabini ngasemva kwe-MOSFETs, ukusetyenziswa kwe-N-channel kufuneka ukulawula i-chip yangaphakathi edityanisiweyo yempompo yentlawulo, ukusetyenziswa kwe-P-channel. inokuqhutywa ngokuthe ngqo.
2. Ukukhethwa kohlobo lwephakheji
Uhlobo lwetshaneli ye-MOSFET yamandla ukumisela inyathelo lesibini lokumisela iphakheji, imigaqo yokukhetha iphakheji.
a.Ukunyuka kobushushu kunye noyilo lwe-thermal yeyona mfuneko isisiseko yokukhetha ipakethe
Ubungakanani bepakethe ezahlukeneyo bunokumelana ne-thermal kunye nokuchithwa kwamandla, ukongeza ekuqwalaseleni iimeko ze-thermal zenkqubo kunye nobushushu be-ambient, njengokuba kukho ukupholisa umoya, ukumila kobushushu kunye nezithintelo zobungakanani, nokuba imeko ivaliwe kunye nezinye izinto, umgaqo osisiseko kukuqinisekisa ukunyuka kobushushu be-MOSFET yamandla kunye nokusebenza kakuhle kwenkqubo, isiseko sokukhetha iiparamitha kunye nokupakisha amandla angaphezulu kweMOSFET.
Ngamanye amaxesha ngenxa yezinye iimeko, isidingo sokusebenzisa ii-MOSFET ezininzi ngaxeshanye ukusombulula ingxaki yokutshatyalaliswa kobushushu, njengakwizicelo ze-PFC, abalawuli beemoto zombane, iinkqubo zonxibelelwano, ezinje ngobonelelo lwamandla emodyuli usetyenziso lwesibini lwe-synchronous rectification applications ihambelana neetyhubhu ezininzi.
Ukuba uxhulumaniso lwe-multi-tube parallel alunakusetyenziswa, ukongeza ekukhetheni i-MOSFET yamandla ngokusebenza okungcono, ukongeza, iphakheji yobungakanani obukhulu okanye uhlobo olutsha lwepakethe lunokusetyenziswa, umzekelo, kwezinye izixhobo zombane ze-AC/DC TO220 ziya itshintshwe ibe yiphakheji ye-TO247;kwezinye izixhobo zombane zenkqubo yonxibelelwano, kusetyenziswa iphakheji entsha ye-DFN8*8.
b.Ubungakanani bokunciphisa inkqubo
Ezinye iinkqubo zombane zilinganiselwe ngobukhulu bePCB kunye nokuphakama kwendawo yangaphakathi, njengemodyuli yamandla ombane weenkqubo zonxibelelwano ngenxa yokuphakama kwezithintelo ngokuqhelekileyo zisebenzisa i-DFN5 * 6, DFN3 * 3 iphakheji;kwezinye unikezelo lwamandla ACDC, ukusetyenziswa koyilo ultra-obhityileyo okanye ngenxa yothintelo iqokobhe, ibandla TO220 iphakheji amandla MOSFET izikhonkwane ngqo kwingcambu, ukuphakama izithintelo ayikwazi ukusebenzisa TO247 package.
Olunye uyilo oluncinci kakhulu lugoba ngokuthe ngqo izikhonkwane zesixhobo, le nkqubo yokuvelisa uyilo iya kuba nzima.
Kuyilo lwebhodi yokukhusela ibhetri ye-lithium enkulu, ngenxa yezithintelo zobungakanani obungqwabalala ngokugqithisileyo, uninzi ngoku zisebenzisa iphakheji ye-CSP ye-chip ukuphucula ukusebenza kwe-thermal kangangoko kunokwenzeka, ngelixa uqinisekisa ubungakanani obuncinci.
c.Ulawulo lweendleko
Iinkqubo ezininzi ze-elektroniki zakuqala zisebenzisa iplagi-in package, kule minyaka ngenxa yokunyuka kweendleko zabasebenzi, iinkampani ezininzi zaqala ukutshintshela kwiphakheji ye-SMD, nangona ixabiso le-welding ye-SMD kune-plug-in ephezulu, kodwa iqondo eliphezulu lokuzenzekelayo kwe-SMD welding, iindleko zizonke zisenokulawulwa kuluhlu olufanelekileyo.Kwezinye izicelo ezifana neebhodi zedesktop kunye neebhodi ezingabizi kakhulu, amandla eMOSFETs kwiipakethe zeDPAK aqhele ukusetyenziswa ngenxa yexabiso eliphantsi lale phakheji.
Ke ngoko, ekukhetheni iphakheji ye-MOSFET yamandla, ukudibanisa isitayile senkampani yabo kunye neempawu zemveliso, kuthathelwa ingqalelo ezi zinto zingasentla.
3. Khetha ukuxhathisa kwi-RDSON, qaphela: hayi okwangoku
Amaxesha amaninzi iinjineli zixhalabile malunga ne-RDSON, kuba i-RDSON kunye nokulahleka kokuqhuba kuhambelana ngokuthe ngqo, i-RDSON encinci, incinci ilahleko yokuqhuba i-MOSFET yamandla, iphezulu ukusebenza kakuhle, ukunyuka kweqondo lobushushu kusezantsi.
Ngokufanayo, iinjineli kangangoko kunokwenzeka ukuba zilandele iprojekthi yangaphambili okanye amacandelo akhoyo kwilayibrari yezinto eziphathekayo, kuba i-RDSON yendlela yokhetho yokwenyani ayinanto eninzi yokuqwalasela.Xa ukunyuka kweqondo lobushushu kumandla akhethiweyo i-MOSFET iphantsi kakhulu, ngenxa yezizathu zeendleko, iya kutshintshela kumacandelo amakhulu e-RDSON;xa ukunyuka kweqondo lokushisa kwamandla e-MOSFET kuphezulu kakhulu, ukusebenza kakuhle kwenkqubo kuphantsi, kuya kutshintshela kwizinto ezincinci ze-RDSON, okanye ngokulungisa isekethe yangaphandle yokuqhuba, ukuphucula indlela yokulungelelanisa ukutshatyalaliswa kobushushu, njl.
Ukuba yiprojekthi entsha kraca, akukho projekthi yangaphambili ekufuneka ilandelwe, emva koko ungakhetha njani amandla eMOSFET RDSON?Nantsi indlela yokwazisa kuwe: indlela yokusetyenziswa kwamandla ombane.
Xa kuyilwa inkqubo yonikezelo lwamandla, iimeko ezaziwayo zezi: igalelo lamandla ombane, i-voltage ephumayo / imveliso yangoku, ukusebenza kakuhle, ukusebenza rhoqo, i-voltage ye-drive, ewe, kukho ezinye izalathi zobugcisa kunye nee-MOSFET zamandla ezinxulumene ikakhulu kwezi parameters.Amanyathelo alandelayo.
a.Ngokoluhlu lwegalelo lombane, i-voltage ephumayo / imveliso yangoku, ukusebenza kakuhle, ukubala ilahleko enkulu yenkqubo.
b.Ilahleko yesekethe yamandla ekhohlisayo, iilahleko zesekethe ezingezizo zamandla, ilahleko ye-IC static kunye neelahleko zokuqhuba, ukwenza uqikelelo olurhabaxa, ixabiso leempirical linokwenza i-10% ukuya kwi-15% yelahleko iyonke.
Ukuba isekethe yamandla inomxhasi wesampulu yangoku, bala amandla okusetyenziswa kwesampulu yangoku.Ilahleko iyonke thabatha ezi lahleko zingentla, inxalenye eseleyo sisixhobo samandla, i-transformer okanye i-inductor power loss.
Ilahleko eseleyo yamandla iya kwabelwa isixhobo samandla kunye ne-transformer okanye i-inductor kumlinganiselo othile, kwaye ukuba awuqinisekanga, ukuhanjiswa okuqhelekileyo ngenani lamacandelo, ukuze ufumane ilahleko yamandla ye-MOSFET nganye.
c.Ilahleko yamandla e-MOSFET yabelwa ilahleko yokutshintsha kunye nelahleko yokuqhuba ngokomlinganiselo othile, kwaye ukuba akuqinisekanga, ilahleko yokutshintsha kunye nelahleko yokuqhuba yabiwa ngokulinganayo.
d.Ngokulahleka kokuqhuba kwe-MOSFET kunye ne-RMS ehambayo yangoku, ukubala ubuninzi obuvumelekileyo bokuchasana nokuqhuba, oku kuxhathisa yi-MOSFET kwiqondo lokushisa eliphezulu lokusebenza kwe-RDSON.
Iphepha ledatha kumandla i-MOSFET RDSON ephawulwe ngeemeko zovavanyo ezichaziweyo, kwiimeko ezahlukeneyo ezichaziweyo zinexabiso elihlukeneyo, ubushushu bokuvavanya: TJ = 25 ℃, i-RDSON ine-coefficient yobushushu obufanelekileyo, ngoko ke ngokuhambelana nobushushu obuphezulu bokusebenza kwe-MOSFET kwaye RDSON iqondo lomlinganiso wobushushu, ukusuka kwixabiso elibaliweyo le-RDSON elingentla, ukufumana i-RDSON ehambelanayo kubushushu obungama-25 ℃.
e.I-RDSON ukusuka kwi-25 ℃ ukukhetha uhlobo olufanelekileyo lwamandla e-MOSFET, ngokweyona parameters ye-MOSFET RDSON, phantsi okanye phezulu.
Ngamanyathelo angasentla, ukhetho lokuqala lwemodeli ye-MOSFET yamandla kunye neeparamitha ze-RDSON.
Eli nqaku licatshulwe kwinethiwekhi, nceda uqhagamshelane nathi ukuze ucime ulwaphulo-mthetho, enkosi!
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